Two-dimensional transition metal dichalcogenide semiconductors have been recognized by the International Roadmap for Devices and Systems (IRDS) as strong candidates 

for CMOS technology iteration in the post-Moore era. However, they are still challenged by high-quality single-crystal wafer growth, metal -semiconductor ohmic contact, 

CMOS integration, and the co-optimization of design and technology (DTCO). Recently, Prof. Tao Li from the School of Materials Science and Engineering, SEU, alongside 

collaborators from the School of Information Science and Engineering, the School of Integrated Circuits at SEU, and the School of Integrated Circuits of at Nanjing University,

 and Suzhou Laboratory, published their latest research advancements in Advanced Functional Materials and Nature Electronics.

Currently, the performance of two-dimensional p-type semiconductors and their front-end devices lags behind that of n-type counterparts, and challenges remain in 

wafer-scale single-crystal preparation and optimization of interfacial hole transport. Prof. Tao Li’s team, in collaboration with Prof. Lu Weibing from the School of Information 

Science and Engineering, Prof. Sun Litao from the School of Integrated Circuits, and Prof. Li Weisheng from Nanjing University, has achieved precise atomic-scale interfacial 

construction of two-dimensional platinum diselenide (PtSe2) transistors with high hole mobility through visualized gate dielectric screening, and demonstrated radio-frequency 

communication capabilities. Related research findings, titled “Visualized Dielectric Screening Enhanced Hole-Mobility in 2D PtSe2 for Wireless Communication”, have been 

published online in Advanced Functional Materials.

This workshowcases the back-end-of-line compatible growth of a 2-inch two-dimensional PtSe? wafer (with the fabrication temperature below 400 °C) and atomic

-scale modulation of its gate dielectric interface, enhancing the hole mobility of field-effect transistors to 36.5 cm2·V?1·s?1, a value competitive with high-quality 

small-sized single crystals of the same category. Through visualized characterization of two scattering mechanisms at the gate-semiconductor interface, it reveals 

that an optimal range of κ values exists for hole transport in two-dimensional p-type semiconductor transistors, particularly in dual-gate GSG radio-frequency 

devices. Experimental cutoff frequencies reach the GHz range, providing new insights for the development of high-performance PMOS and applications in wearable 

wireless communication technologies. Following the team’s previous work on strain-engineered two-dimensional PtSe? gas sensing (ACS Nano 2023, 17, 11557) 

and its wearable sensing-communication fusion integrated circuits (IEDM 2024, 27-5), this study further deepens the understanding of the transport principles in 

two-dimensional p-type PtSe? transistors. It will contribute to the future development and application of sensing-communication fusion wearable circuits based on 

novel two-dimensional materials.

The PhD student Wang Zhehan and the graduate student Wu Yanling from the School of Materials Science and Engineering, SEU, are the paper’s first authors, with 

Prof. Tao Li and associate researcher Liu Yichen being co-corresponding authors.

Paper link:https://doi.org/10.1002/adfm.202521476

In foundational research aimed at integrated circuit applications, achieving ohmic contacts with contact gate pitch (CGP) scaled below 20 nm in two-dimensional 

transition metal dichalcogenide transistors poses a significant challenge. Wang Xinran and Li Weisheng’s team from Nanjing University, in collaboration withProf. Tao Li from SEU, designed an interface between MoS2 and epitaxially grown crystalline semi-metal antimony, achieving a contact resistance as low as 98 Ω·μm 

at an 18 nm contact length. The resulting field-effect transistor array with CGP=40 nm demonstrated excellent performance in terms of drive current, on or off ratio 

ratio, and subthreshold swing, and met all specifications for the IRDS 1nm technology node.

Paper link:https://doi.org/10.1038/s41928-025-01500-4

The related works were supported by the National Key R&D Program, the National Natural Science Foundation (Innovative Research Groups, Major Cultivation, etc.), 

multiple national and provincial talent programs, the Jiangsu Province Key R&D Program, and the Zijin Youth Scholars etc.

Source: School of Materials Science and Engineering, SEU

Translated by: Melody Zhang

Proofread by: Gao Min

Edited by: Li Xinchang