At the recently held 71st IEEE International Electron Devices Meeting (IEDM) in San Francisco, USA, three significant research achievements from the School of Integrated

Circuits, SEU, were released.

Prof. Sun Weifeng, Associate Prof. Wu Wangran, and Associate Prof. Shi Runxiao, along with their research team, released two achievements at the conference. The first

achievement is titled"Flexible 1T-1FeMTFT Active-matrix Micro-LED Display Utilizing ITO FeMTFT with Record Memory Window of 0.63 V/nm and Low Power Consumption."

Addressing the urgent demands of flexible electronics for bendable, high-resolution, and energy-efficient display technologies, this work overcomes the limitations of

traditional pixel circuits in power consumption and size scaling. It successfully achieves low-temperature (≤400?°C) fabrication of an HZO ferroelectric gate stack combined

with an ITO channel to form a metal-ferroelectric field-effect transistor (FeMTFT) on a polyimide flexible substrate. The ferroelectric capacitor integrated into this FeMTFT

demonstrated a high remnant polarization of 47 μC/cm2, while the device exhibited a record normalized memory window of 0.63 V/nm (7.5 V), a high on/off ratio of 4×10?,

and maintained stable performance even after 105 bending cycles at a bending radius of 4 mm. On this basis, the team proposed an innovative 1T-1FeMTFT pixel

architecture that could support dual-mode pulse amplitude/width modulation (PAM/PWM) driving. This achievement would enable precise grayscale control at a pixel refresh

rate of 200 kHz, ultimately leading to the successful development of a fully flexible active-matrix Micro-LED display with a resolution of 447 PPI and dynamic power

consumption as low as 0.68 nW. Besides, it could provide a crucial pathway for next-generation display technologies in wearable and portable devices.

The second achievement, titled “Monolithic 3D-Integrated Neuromorphic Biosignal Processor Using Hydrogen-Controlled Dual-Gate TFTs on a Flexible Substrate,” presented

a flexible neuromorphic bio-signal processing system based on hydrogen-controlled dual-gate oxide thin-film transistors (DG-TFTs). This system monolithically integrated a

sensor electrode array (SEA), an analog front-end (AFE), and an artificial neural network (ANN) in a three-dimensional architecture on a flexible substrate. By employing a

temperature-gradient process to effectively suppress hydrogen release, the system ensures device threshold voltage stability and electrical uniformity. Furthermore, using a

dynamic compensation method based on DG-TFTs, the AFE achieved a gain of 62.3 dB, a bandwidth of 1.1 kHz, and a common-mode rejection ratio of 74.5 dB within a

compact area of 1.5 mm2. Simultaneously, the ANN implemented with DG-TFTs for in-memory computing reached an accuracy of 96% in classifying four types of

electrocardiogram (ECG) signals. This research establishes a critical foundation for the application of flexible integrated sensing-storage-computing chips in high-fidelity

bio-signal acquisition and health monitoring, highlighting the essential role of flexible interface circuits in breaking away from silicon-based dependencies and enabling fully

flexible integration.

The third achievement comes from the team led by Prof. Huang Xiaodong and Associate Prof. Wu Lindong, titled “Monolithically Integrated One-Supercapacitor-One-

-Optoelectronic Memristor Array for Energy-Autonomous In-Sensor Image Processing.” Optoelectronic memristors can realize ultra-low-power image processing, 

demonstrating great potential for intelligent applications such as the IoT and robotics. However, reliance on external power sources has increased system complexity and 

integration challenges. Emerging thin-film all-solid-state supercapacitors, characterized by high power density and excellent on-chip integrability,offer a new direction for 

developing truly energy-autonomous sensing and processing systems. This paper reports the first construction of a monolithically integrated “one-supercapacitor–one-

-optoelectronic memristor” pixelarray, achieving external-power-free in-situ image enhancement and encryption. In this design, the V?O?/LiPON/ZnO supercapacitor features 

a six-order tunable energy storagecapability, while the V?O?/ZnO optoelectronic memristor offers tunable ultraviolet response. Through monolithic integration via a shared 

bottom electrode, the array can be entirelypowered by the integrated supercapacitor for in-situ processing. Experimental results showed that the array significantly enhances 

image quality while effectively suppressingenvironmental noise. Additionally, by generating encryption keys through the optoelectronicmemristor's stochastic behavior and 

storing them in the supercapacitor, the systemachieves lossless image encryption.

The IEDM, founded in 1955, is a premier global conference in the field of electronic devices, dedicated to reporting the latest advances in the design, manufacturing, physics, 

and modeling of electronic devices. It holds high academic prestige and extensive influence in both academia and industry.

Source: the School of Integrated Circuits, SEU

Translated by: Melody Zhang

Proofread by: Gao Min

Edited by: Li Xinchang